- 您現在的位置：買賣IC網 > PDF目錄377516 > IRG4BC30UDPBF (International Rectifier) General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP PDF資料下載
參數資料
| 型號： | IRG4BC30UDPBF |
| 廠商： | International Rectifier |
| 英文描述： | General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管超快速IGBT的CoPack |
| 文件頁數： | 1/11頁 |
| 文件大小： | 282K |
| 代理商： | IRG4BC30UDPBF |
IRG4BC30UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
Industry standard TO-220AB package
E
G
n-channel
C
V
CES
= 600V
V
CE(on) typ.
=
1.95V
@V
GE
= 15V, I
C
= 12A
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
------
------
------
-----
------
Typ.
------
------
0.50
-----
2 (0.07)
Max.
1.2
2.5
------
80
------
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Thermal Resistance
UltraFast CoPack IGBT
11/3/03
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
23
12
92
92
12
92
± 20
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Benefits
Generation -4 IGBT's offer highest efficiencies
available
IGBTs optimized for specific application conditions
HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
PD-94810
W
TO-220AB
www.irf.com
1
Lead-Free
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BC30U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A) |
| IRG4BC30W-SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4BC40FPBF | Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT |
| IRG4BC40F | INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) |
| IRG4BC40SPBF | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BC30UD-S | 制造商:International Rectifier 功能描述:600V 23.000A COPAK D2PAK / IGBT : JA / D |
| IRG4BC30UPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC30US | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) |
| IRG4BC30U-S | 功能描述:IGBT UFAST 600V 23A D2PAK RoHS:否 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4BC30U-SPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。