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參數(shù)資料
| 型號： | IRG4PC50S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) |
| 中文描述： | 絕緣柵雙極TANSISTOR（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.28V，@和VGE \u003d 15V的，集成電路\u003d 41A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 164K |
| 代理商： | IRG4PC50S |
Parameter
Max.
600
70
41
140
140
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm) from case )
10 lbfin (1.1Nm)
°C
IRG4PC50S
Parameter
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.64
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
1
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°
C/W
g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
TO-247AC
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.28V
@V
GE
= 15V, I
C
= 41A
www.irf.com
2/7/2000
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