- 您現在的位置：買賣IC網 > PDF目錄384500 > IRG4PC50U (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) PDF資料下載
參數資料
| 型號： | IRG4PC50U |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.65V的，@和VGE \u003d 15V的，集成電路\u003d 27A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 147K |
| 代理商： | IRG4PC50U |
E
C
G
n-channel
TO-247AC
Features
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.65V
@V
GE
= 15V, I
C
= 27A
Parameter
Typ.
----
0.24
----
6 (0.21)
Max.
0.64
----
40
----
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
Parameter
Max.
600
55
27
220
220
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25
°
C
P
D
@ T
C
= 100
°
C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
Absolute Maximum Ratings
W
12/30/00
www.irf.com
1
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4PC60F | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PC60U | INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PH20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
| IRG4PH20K | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
| IRG4PH20KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4PC50UD | 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 55A 3-Pin (3+Tab) TO-247AC 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC50UD-E | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PC50UD-EPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC50UD-MP | 制造商:International Rectifier 功能描述:IGBT COPAK-247 - Rail/Tube 制造商:International Rectifier 功能描述:IGBT 600V 55A 200W TO247AC 制造商:International Rectifier 功能描述:TUBE / IGBT COPAK-247 |
| IRG4PC50UDPBF | 功能描述:IGBT 晶體管 600V UltraFast 8-60kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。