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參數資料
| 型號： | IRG4PH40S |
| 英文描述： | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC |
| 中文描述： | 晶體管| IGBT的|正陳| 1.2KV五（巴西）國際消費電子展|甲一（c）|至247AC |
| 文件頁數： | 1/8頁 |
| 文件大小： | 144K |
| 代理商： | IRG4PH40S |
Parameter
Max.
600
70
41
140
140
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
A
V
mJ
-55 to + 150
°C
225
IRG4PC50S-P
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Typ.
–––
0.24
–––
Max.
0.64
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Surface Mountable
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.28V
@V
GE
= 15V, I
C
= 41A
1
www.irf.com
05/14/02
Surface Mountable
TO-247
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4PH40SD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PH40U | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40UD | 制造商:International Rectifier 功能描述:IGBT TO-247 |
| IRG4PH40UD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4PH40UD2-E | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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