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參數資料
| 型號： | IRG4ZH70UD |
| 文件頁數： | 1/10頁 |
| 文件大小： | 224K |
| 代理商： | IRG4ZH70UD |
IRG4ZC71KD
Surface Mountable
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor
control, t
sc
=10μs, V
CC
= 360V , T
J
= 125°C,
V
GE
= 15V
IGBT co-packaged with HEXFRED
ultrafast,
ultra-soft-recovery antiparallel diodes for use in
bridge configurations
Combines low conduction losses with high
switching speed
Low profile low inductance SMD-10 Package
Separated control & Power-connections for easy
paralleling
Good coplanarity
Easy solder inspection and cleaning
Benefits
Highest power density and efficiency available
HEXFRED Diodes optimized for performance with
IGBTs. Minimized recovery characteristics
IGBTs optimized for specific application conditions
V
CES
= 600V
V
CE(
ON
)typ =
1.75V
@V
GE
= 15V, I
C
= 60A
C
n-channel
E
G
E(k)
PRELIMINARY
PD - 91723
www.irf.com
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
100
60
200
200
50
200
10
± 20
350
140
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
-55 to +150
°C
Absolute Maximum Ratings
W
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.44
6.0(0.21)
Max.
0.36
0.69
–––
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
°C/W
g (oz)
Thermal Resistance
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4ZH71KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Surface Mountable Short Circuit Rated UltraFast IGBT (INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE) |
| IRG6B330UDPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:PDP TRENCH IGBT |
| IRG6I320UPBF | 功能描述:IGBT 晶體管 330V PLASMA DISPLAY PANEL TRENCH IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG6I330U-110P | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG6I330U-111P | 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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