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參數資料
| 型號： | IRG4ZH71KD |
| 文件頁數： | 1/10頁 |
| 文件大小： | 224K |
| 代理商： | IRG4ZH71KD |
IRG4ZC71KD
Surface Mountable
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
High short circuit rating optimized for motor
control, t
sc
=10μs, V
CC
= 360V , T
J
= 125°C,
V
GE
= 15V
IGBT co-packaged with HEXFRED
ultrafast,
ultra-soft-recovery antiparallel diodes for use in
bridge configurations
Combines low conduction losses with high
switching speed
Low profile low inductance SMD-10 Package
Separated control & Power-connections for easy
paralleling
Good coplanarity
Easy solder inspection and cleaning
Benefits
Highest power density and efficiency available
HEXFRED Diodes optimized for performance with
IGBTs. Minimized recovery characteristics
IGBTs optimized for specific application conditions
V
CES
= 600V
V
CE(
ON
)typ =
1.75V
@V
GE
= 15V, I
C
= 60A
C
n-channel
E
G
E(k)
PRELIMINARY
PD - 91723
www.irf.com
1
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
100
60
200
200
50
200
10
± 20
350
140
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
-55 to +150
°C
Absolute Maximum Ratings
W
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.44
6.0(0.21)
Max.
0.36
0.69
–––
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
°C/W
g (oz)
Thermal Resistance
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
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