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參數(shù)資料
| 型號： | IRG4PSH71KD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.97V, @Vge=15V, Ic=42A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管（VCES和\u003d 1200伏，的Vce（on）典型.\u003d 2.97V，@和VGE \u003d 15V的，集成電路\u003d 42A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 146K |
| 代理商： | IRG4PSH71KD |
IRG4PSH71K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD - 91687A
E
C
G
n-channel
PRELIMINARY
Features
Hole-less clip/pressure mount package compatible
with TO-247 and TO-264, with reinforced pins
High short circuit rating IGBTs, optimized for
motorcontrol
Minimum switching losses combined with low
conduction losses
Tightest parameter distribution
Creepage distance increased to 5.35mm
Highest current rating IGBT
Maximum power density, twice the power
handling of the TO-247, less space than TO-264
Benefits
V
CES
= 1200V
V
CE(on) typ.
= 2.97V
@V
GE
= 15V, I
C
= 42A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
SC
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
1200
78
42
156
156
10
± 20
170
350
140
V
μs
V
mJ
-55 to + 150
300 (0.063 in. (1.6mm from case )
°C
Absolute Maximum Ratings
W
5/11/99
www.irf.com
1
SUPER - 247
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
Min.
–––
–––
–––
20.0(2.0)
–––
Typ.
–––
0.24
–––
–––
6 (0.21)
Max.
0.36
–––
38
–––
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
°C/W
N (kgf)
g (oz)
Thermal Resistance\ Mechanical
Parameter
Max.
Units
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PSH71KDPBF | 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PSH71KPBF | 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PSH71U | 功能描述:IGBT UFAST 1200V 99A SUPER-247 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4PSH71UD | 功能描述:IGBT W/DIODE 1200V 99A SUPER-247 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標(biāo)準(zhǔn)包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時(shí)的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標(biāo)準(zhǔn) 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件 |
| IRG4PSH71UDPBF | 功能描述:IGBT 晶體管 1200V UltraFast 4-20kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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