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參數(shù)資料
| 型號(hào)： | IRGSL10B60KD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/15頁 |
| 文件大小： | 324K |
| 代理商： | IRGSL10B60KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
8/18/04
Benefits
Benchmark Efficiency for Motor Control.
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
Parameter
Max.
600
22
12
44
44
22
10
44
± 20
156
62
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
–––
1.44
Max.
0.8
3.4
–––
62
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
IRGB10B60KD
IRGS10B60KD
IRGSL10B60KD
E
G
n-channel
C
V
CES
= 600V
I
C
= 12A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
D
2
Pak
IRGS10B60KD
TO-220AB
IRGB10B60KD
TO-262
IRGSL10B60KD
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