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參數(shù)資料
| 型號(hào)： | IRGB30B60K |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 328K |
| 代理商： | IRGB30B60K |
INSULATED GATE BIPOLAR TRANSISTOR
10/8/03
www.irf.com
1
IRGB30B60K
IRGS30B60K
IRGSL30B60K
V
CES
= 600V
I
C
= 50A, T
C
=100°C
at T
J
=175°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.95V
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
D
2
Pak
IRGS30B60K
TO-220AB
IRGB30B60K
TO-262
IRGSL30B60K
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Max.
600
78
50
120
120
2500
±20
370
180
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.41
–––
62
40
–––
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
Weight
g
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| IRGB4059DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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