- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384501 > IRGB4045DPBF (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PDF資料下載
參數(shù)資料
| 型號： | IRGB4045DPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 792K |
| 代理商： | IRGB4045DPBF |
WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGB4045DPbF
1
www.irf.com
11/28/06
=
=
C
E
C
G
G
C
E
Gate
Collector
Emitter
E
G
n-channel
C
Features
Low V
CE (on)
Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of the Parts Tested for I
LM
Positive V
CE (on)
Temperature Coefficient.
Ultra Fast Soft Recovery Co-pak Diode
Tighter Distribution of Parameters
Lead-Free Package
Benefits
High Efficiency in a Wide Range of Applications
Suitable for a Wide Range of Switching Frequencies due
to Low V
CE (ON)
and Low Switching Losses
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
Absolute Maximum Ratings
Parameter
Max.
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@T
C
=25°C
I
F
@T
C
=100°C
I
FM
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
V
P
D
@ T
C
=25°
P
D
@ T
C
=100°
T
J
T
STG
W
°C
Thermal Resistance
Parameter
Min.
—
—
—
—
Typ.
—
—
0.5
—
Max.
1.94
6.30
—
62
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
-55 to + 175
300 (0.063 in. (1.6mm) from case)
± 20
± 30
77
39
°C/W
V
GE
600
12
6.0
20
20
8.0
4.0
20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGB4055PBF | Advanced Trench IGBT Technology |
| IRGB4059DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGB4064DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGB440U | INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A) |
| IRGB4B60K | INSULATED GATE BIPOLAR TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGB4055PBF | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 300V 110A 3-Pin(3+Tab) TO-220AB 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 300V 110A 3PIN TO-220AB - Bulk 制造商:International Rectifier 功能描述:IGBT 300V TO-220 |
| IRGB4056DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4059DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4060DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB4061DPBF | 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。