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參數資料
| 型號： | IRG4ZH50KD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 243K |
| 代理商： | IRG4ZH50KD |
www.irf.com
1
IRG4ZH50KD
Surface Mountable Short
Circuit Rated UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
G
High short circuit rating optimized for motor control, t
sc
= 10
μs,
V
CC
= 720V, T
J
= 125°C, V
GE
= 15V
G
IGBT co-packaged with HEXFRED
TM
ultrafast, ultra-soft
recovery antiparallel diodes for use in bridge configurations
G
Combines low conduction losses with high switching speed
G
Low profile low inductance SMD-10 Package
G
Separated control & Power-connections for easy paralleling
G
Good coplanarity
G
Easy solder inspection and cleaning
Benefits
G
Highest power density and efficiency available
G
HEXFRED Diodes optimized for performance with IGBTs.
Minimized recovery characteristics
G
High input impedance requires low gate drive power
G
Less noise and interference
Absolute Maximum Ratings
V
CES
= 1200V
V
CE(
ON
)typ =
2.79V
@V
GE
= 15V, I
C
= 29A
C
n-channel
E
G
E(k)
PD - 9.1680
Notes:
Repetitive rating: V
= 20V; pulse width limited by maximum
junction temperature (figure 20)
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
(figure 19)
SMD-10
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
54
29
108
108
16
108
10
± 20
210
83
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
t
sc
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Thermal Resistance
A
μs
V
-55 to +150
°C
W
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
SMD-10 Case-to-Heatsink (typical), *
Weight
Min.
—
—
—
—
Typ.
—
—
0.44
6.0(0.21)
Max.
0.60
1.20
—
—
Units
R
θ
JC
R
θ
JC
R
θ
CS
Wt
°C/W
g (oz)
* Assumes device soldered to 3.0 oz. Cu on 3.0mm IMS/Aluminum board, mounted to flat, greased heatsink.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
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