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參數資料
| 型號： | IRGB4061DPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 415K |
| 代理商： | IRGB4061DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5
μ
S short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4061DPbF
1
www.irf.com
09/06/07
E
G
n-channel
C
V
CES
= 600V
I
C
= 18A, T
C
= 100°C
t
SC
≥
5
μ
s, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
G
C
E
Gate
Collector
Emitter
TO-220AB
GC
E
C
Absolute Maximum Ratings
Parameter
Max.
600
36
18
72
72
36
18
72
±20
±30
206
103
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
80
Max.
0.73
2.00
–––
–––
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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