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參數(shù)資料
| 型號(hào)： | IRGP4062DPBF |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 964K |
| 代理商： | IRGP4062DPBF |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4062DPbF
IRGP4062DPbF
1
www.irf.com
02/24/06
E
G
n-channel
C
V
CES
= 600V
I
C
= 24A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.65V
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
600
48
24
96
96
48
24
96
±20
±30
250
125
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
–––
Units
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
°C/W
GC
E
TO-247AC
TO-220AB
GC
E
C
C
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