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參數資料
| 型號： | IRGB430 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d的500V，@和VGE \u003d 15V的，集成電路\u003d 15A條） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 425K |
| 代理商： | IRGB430 |
C-625
IRGB430UD2
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Switching-loss rating includes all "tail" losses
HEXFRED
Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
TM
soft ultrafast diodes
E
G
n-channel
C
V
CES
= 500V
V
CE(sat)
≤
3.0V
@V
GE
= 15V, I
C
= 15A
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
—
Typ.
——
—
0.50
—
2 (0.07)
Max.
1.2
2.5
—
80
—
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
PD - 9.1067
TO-220AB
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
500
25
15
50
50
12
50
± 20
100
42
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1 Nm)
Absolute Maximum Ratings
Thermal Resistance
Revision 1
Next Data Sheet
Index
Previous Datasheet
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