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參數資料
| 型號： | IRGB6B60K |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數： | 1/13頁 |
| 文件大?。?/td> | 245K |
| 代理商： | IRGB6B60K |
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
Parameter
Max.
600
13
7.0
26
26
± 20
90
36
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
8/18/04
Absolute Maximum Ratings
Benefits
Benchmark Efficiency for Motor Control.
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Thermal Resistance
IRGB6B60K
IRGS6B60K
IRGSL6B60K
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
D
2
Pak
IRGS6B60K
TO-220AB
IRGB6B60K
TO-262
IRGSL6B60K
E
C
G
n-channel
相關PDF資料 |
PDF描述 |
|---|---|
| IRGS6B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGSL6B60K | INSULATED GATE BIPOLAR TRANSISTOR |
| IRGBC40S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A) |
| IRGBF20 | INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A) |
| IRGBF20F | Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 6.3V; Case Size: 10x10 mm; Packaging: Tape & Reel |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGB6B60KD | 制造商:International Rectifier 功能描述:SINGLE IGBT, 600V, 13A, Transistor Type:IGBT, DC Collector Current:13A, Collecto |
| IRGB6B60KDPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB6B60KPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGB8B60K | 制造商:International Rectifier 功能描述:IGBT TO-220AB |
| IRGB8B60KPBF | 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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