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參數(shù)資料
| 型號： | IRGS6B60K |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 245K |
| 代理商： | IRGS6B60K |
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
Parameter
Max.
600
13
7.0
26
26
± 20
90
36
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
8/18/04
Absolute Maximum Ratings
Benefits
Benchmark Efficiency for Motor Control.
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Thermal Resistance
IRGB6B60K
IRGS6B60K
IRGSL6B60K
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
D
2
Pak
IRGS6B60K
TO-220AB
IRGB6B60K
TO-262
IRGSL6B60K
E
C
G
n-channel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGS6B60KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGS6B60KDPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 10-30KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGS6B60KDTRLP | 功能描述:IGBT 模塊 600V 5A RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRGS6B60KDTRRP | 功能描述:IGBT 模塊 600V ULTRAFAST 10-30KHZ COPACK IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRGS6B60KPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 10-30 KHZ IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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