- 您現在的位置：買賣IC網 > PDF目錄384501 > IRGI4055PBF (International Rectifier) PDP TRENCH IGBT PDF資料下載
參數資料
| 型號： | IRGI4055PBF |
| 廠商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等離子溝道IGBT |
| 文件頁數： | 1/7頁 |
| 文件大小： | 260K |
| 代理商： | IRGI4055PBF |
www.irf.com
1
02/17/06
IRGI4055PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ 36A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.10
220
150
V
V
A
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
Max.
2.7
Units
°C/W
R
θ
JC
Junction-to-Case
Max.
±30
18
220
46
19
0.37
36
300
-40 to + 150
10lb in (1.1N m)
E
C
G
n-channel
G
C
E
Gate
Collector
Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| IRGI4061DPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGI4065PBF | PDP TRENCH IGBT |
| IRGI4085PBF | PDP TRENCH IGBT |
| IRGIB10B60KD1 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGIB6B60KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGI4056DPBF | 功能描述:IGBT 18A 600V W/DIO TO-220FP RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRGI4056DPBF | 制造商:International Rectifier 功能描述:SINGLE IGBT 600V |
| IRGI4059DPBF | 功能描述:IGBT ISOLATED TO-220AB RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRGI4060DPBF | 功能描述:IGBT 600V 14A W/DIO TO-220AB FP RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRGI4060DPBF | 制造商:International Rectifier 功能描述:SINGLE IGBT 600V |
發布緊急采購，3分鐘左右您將得到回復。