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參數(shù)資料
| 型號(hào)： | IRGI4065PBF |
| 廠商： | International Rectifier |
| 英文描述： | PDP TRENCH IGBT |
| 中文描述： | 等離子溝道IGBT |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 331K |
| 代理商： | IRGI4065PBF |
www.irf.com
1
02/17/06
IRGI4065PbF
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low V
CE(on)
and Energy per Pulse (E
PULSETM
)
for improved panel efficiency
High repetitive peak current capability
Lead Free package
V
CE
min
V
CE(ON)
typ. @ I
C
= 28A
I
RP
max @ T
C
= 25°C
T
J
max
300
1.25
170
150
V
V
A
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
V
A
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
W
W/°C
°C
T
J
T
STG
N
Thermal Resistance
Parameter
Typ.
–––
Max.
3.20
Units
°C/W
R
θ
JC
Junction-to-Case
300
-40 to + 150
10lb in (1.1N m)
39
16
0.31
Max.
±30
14
170
28
E
C
G
n-channel
G
C
E
Gate
Collector
Emitter
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