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參數資料
| 型號： | IRGIB7B60KD |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 435K |
| 代理商： | IRGIB7B60KD |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
09/17/03
www.irf.com
1
IRGIB7B60KD
E
G
n-channel
C
V
CES
= 600V
I
C
= 8.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
Max.
600
12
8.0
24
24
9.0
6.0
18
2500
±20
39
20
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.8
6.0
–––
62
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g
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