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參數資料
| 型號： | IRGP20B120U-E |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 148K |
| 代理商： | IRGP20B120U-E |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
UltraFast Non Punch Through (NPT)
Technology
Low Diode V
F
(1.67V Typical @ 20A & 25°C)
10
μ
s Short Circuit Capability
Square RBSOA
UltraSoft Diode Recovery Characteristics
Positive V
CE(on)
Temperature Coefficient
Extended Lead TO-247AD Package
Benefits
Benchmark Efficiency Above 20KHz
Optimized for Welding, UPS, and Induction Heating
Applications
Rugged with UltraFast Performance
Low EMI
Significantly Less Snubber Required
Excellent Current Sharing in Parallel Operation
Longer Leads for Easier Mounting
Absolute Maximum Ratings
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
(Fig.24)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.42
0.83
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
W
t
Z
θ
JC
www.irf.com
°C/W
g (oz)
12/14/99
E
G
C
IRGP20B120UD-E
UltraFast CoPack IGBT
PD- 93817
TO-247AD
N-channel
1
V
CES
= 1200V
V
CE(on) typ.
= 3.05V
V
GE
= 15V, I
C
= 20A, 25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
(Fig.1)
Continuous Collector Current
(Fig.1)
Pulsed Collector Current
(Fig.3, Fig. CT.5)
Clamped Inductive Load Current
(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
(Fig.2)
Maximum Power Dissipation
(Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
1200
40
20
120
120
20
120
± 20
300
120
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
-55 to + 150
300, (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
°C
W
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRGP20B120U-EP | 功能描述:IGBT 晶體管 1200V UltraFast 5-40kHz Single IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP20B60PD | 制造商:INTRSL 功能描述: |
| IRGP20B60PD1 | 制造商:International Rectifier 功能描述:IINTERNATIONAL RECTIFIER PART |
| IRGP20B60PDHR | 制造商:International Rectifier 功能描述:TRANS IGBT CHIP N-CH 600V 40A 3PIN TO-247AC - Bulk |
| IRGP20B60PDPBF | 功能描述:IGBT 晶體管 600V Warp2 150kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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