欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: IRGIB6B60KD
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)二極管
文件頁數(shù): 1/12頁
文件大小: 273K
代理商: IRGIB6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
4/14/04
Benefits
Benchmark Efficiency for Motor Control.
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGIB6B60KD
E
G
n-channel
C
V
CES
= 600V
I
C
= 6.0A, T
C
=90°C
t
sc
> 10μs, T
J
=175°C
V
CE(on)
typ. = 1.8V
TO-220
Full-Pak
Absolute Maximum Ratings
Parameter
Max.
600
11
7.0
22
22
9.0
6.0
18
2500
±20
38
19
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.9
6.0
–––
62
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g
PD-94427D
相關(guān)PDF資料
PDF描述
IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIH50F INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B120UD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR
IRGP20B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGIB6B60KD116P 功能描述:IGBT 晶體管 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIB6B60KDPBF 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIB7B60KD 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGIB7B60KDPBF 功能描述:IGBT 晶體管 600V Low-Vceon RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGIH50F 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
主站蜘蛛池模板: 子长县| 黄冈市| 辽源市| 泽库县| 台中县| 松原市| 阿坝县| 文水县| 阳泉市| 恩平市| 景泰县| 青阳县| 绿春县| 沾化县| 新民市| 灵宝市| 馆陶县| 赤水市| 墨玉县| 合肥市| 郴州市| 田阳县| 西和县| 保山市| 黔南| 浦城县| 潼南县| 千阳县| 彭州市| 简阳市| 铁岭市| 金山区| 从江县| 阳泉市| 石泉县| 楚雄市| 竹溪县| 翁牛特旗| 马山县| 武城县| 手游|