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參數資料
型號: IRGC49B120KB
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
中文描述: 晶體管| IGBT的|正陳| 1.2KV五(巴西)國際消費電子展|芯片
文件頁數: 1/1頁
文件大小: 15K
代理商: IRGC49B120KB
IRGC49B120KB
Die in Wafer Form
www.irf.com
01/09/02
Mechanical Data
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Die Outline
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4μm)
0.305" x 0.390"
150mm, with std. < 100 > flat
185μm, +/-15μm
01-5405
100μm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Recommended Die Attach Conditions
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Test Conditions
1.35V min, 1.60V max
1200V min
4.4V min, 6.0V max
20μA max
± 1.1μA max
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 500μA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 500μA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
E
C
G
1200V
I
C(nom)
= 50A
V
CE(on) typ.
=2.33V @
I
C(nom)
@ 25
°
C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Features
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
μ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Excellent Current Sharing in Parallel Operation
Qualified for Industrial Market
6.354
[.250]
1.196
[.047]
1.205
[.047]
7.747
[.305]
8.429
[.332]
9.906
[.390]
EMITTER
G
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
LENGTH
OVERALL DIE:
WIDTH
&
NOTES:
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
IS = CURRENTSENSE
SK = SOURCE KELVIN
BONDING PADS:
WIDTH
&
LENGTH
E = EMITTER
Reference Standard IR Package Part: IRGPS60B120KD
PD - 94353
相關PDF資料
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IRGC49B120UB TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
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