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參數資料
型號: IRGC50B120KB
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
中文描述: 晶體管| IGBT的|正陳| 1.2KV五(巴西)國際消費電子展|芯片
文件頁數: 1/1頁
文件大小: 18K
代理商: IRGC50B120KB
IRGC50B120KB
www.irf.com
2/14/2000
Die in Wafer Form
Mechanical Data
Electrical Characteristics (Wafer Form)
Description
Guaranteed (min, max)
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Die Outline
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Wafer Diameter
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
Reject Ink Dot Size
Ink Dot Location
Recommended Storage Environment
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4μm)
0.364" x 0.364"
150mm, with std. < 100 > flat
185μm, +/-15μm
01-5346
100μm
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Recommended Die Attach Conditions
Parameter
V
CE (on)
V
(BR)CES
V
GE(th)
I
CES
I
GES
Test Conditions
1.3V min, 1.53V max
1200V min
4.4V min, 6.0V max
20μA max
± 1.1μA max
I
C
= 10A, T
J
= 25°C, V
GE
= 15V
T
J
= 25°C, I
CES
= 500μA, V
GE
= 0V
V
GE
= V
CE
, T
J
=25°C, I
C
= 500μA
T
J
= 25°C, V
CE
= 1200V
T
J
= 25°C, V
GE
= +/-20V
E
C
G
1200V
I
C(nom)
= 50A
V
CE(on) typ.
=2.15V @
I
C(nom)
@ 25°C
Motor Control IGBT
Short Circuit Rated
150mm Wafer
Features
GEN5 Non Punch Through (NPT) Technology
Low V
CE(on)
10
μ
s Short Circuit Capability
Square RBSOA
Positive V
CE(on)
Temperature Coefficient
Benefits
Benchmark Efficiency for Motor Control Applications
Rugged Transient Performance
Excellent Current Sharing in Parallel Operation
7.757
[.305]
1.205
[.047]
1.196
[.047]
G
EMITTER
7.854
[.309]
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
> [.050] TOLERANCE = + /- [.008]
> 1.270 TOLERANCE = + /- 0.203
< [.050] TOLERANCE = + /- [.004]
< 1.270 TOLERANCE = + /- 0.102
OVERALL DIE:
WIDTH
&
LENGTH
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
SK = SOURCE KELVIN
IS = CURRENTSENSE
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
4. DIMENSIONAL TOLERANCES:
BONDING PADS:
WIDTH
G = GATE
S = SOURCE
&
3. LETTER DESIGNATION:
NOTES:
E = EMITTER
01-5346
9.246
[.364]
PD - 93870
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PDF描述
IRGC50B120UB TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | CHIP
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