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參數資料
| 型號： | IRGPC30KD2 |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復二極管的絕緣柵雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）的超快軟恢復二極管（帶超快軟恢復二極管的絕緣柵雙極型晶體管） |
| 文件頁數： | 3/9頁 |
| 文件大小： | 146K |
| 代理商： | IRGPC30KD2 |
Fig. 1
- Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPC30KD2
0.1
1
10
100
0.1
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
A
1
10
100
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
A
0
4
8
12
16
0.1
1
10
100
f, Frequency (kHz)
L
A
60% of rated
voltage
Duty cycle: 50%
J
Tsink
Gate drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 24W
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