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參數(shù)資料
| 型號： | IRGPF50F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IRGPF50F |
C-269
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPF50F
0
20
40
60
0.1
1
10
100
L
f, Frequency (kHz)
60% of rated
voltage
Ideal diodes
Square wave:
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Power Dissipation = 40W
Triangular wave:
Clamp voltage:
80% of rated
1
10
100
1000
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
1
10
100
1000
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
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