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參數(shù)資料
| 型號(hào)： | IRGPF50F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 6/6頁(yè) |
| 文件大小： | 110K |
| 代理商： | IRGPF50F |
C-272
IRGPF50F
Fig. 12
- Turn-Off SOA
Fig. 11 -
Typical Switching Losses vs.
Collector-to-Emitter Current
0
4
8
12
16
10
20
30
40
50
60
T
I , Collector-to-Emitter Current (A)
R = 5
T = 150°C
V = 720V
V = 15V
0.1
1
10
100
1000
1
10
100
1000
C
V , Collector-to-Emitter Voltage (V)
I
SAFE OPERATING AREA
V = 20V
T = 125°C
Refer to Section D for the following:
Appendix F: Section D - page D-8
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3
- JEDEC Outline TO-247AC (TO-3P)
Section D - page D-13
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