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參數(shù)資料
| 型號： | IRGR3B60KD2 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/13頁 |
| 文件大小： | 257K |
| 代理商： | IRGR3B60KD2 |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VCE (on) Temperature Coefficient.
03/24/03
Benefits
Benchmark Efficiency for Motor Control.
www.irf.com
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGR3B60KD2
E
G
n-channel
C
V
CES
= 600V
I
C
= 4.2A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.9V
D-Pak
Absolute Maximum Ratings
Parameter
Max.
600
7.8
4.2
15.6
15.6
6.0
3.2
15.6
±20
52
21
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ Tc = 25°C
I
F
@ Tc = 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3
Max.
2.4
8.8
50
–––
Units
°C/W
R
θ
JC
R
θ
JC
R
θ
JA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Junction-to-Ambient, (PCB Mount)
Weight
g
PD - 94601A
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