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參數資料
| 型號： | IRH7450 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 11A I(D) | TO-204AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 500V五（巴西）直| 11A條（?。﹟對204AA |
| 文件頁數： | 12/12頁 |
| 文件大?。?/td> | 412K |
| 代理商： | IRH7450 |
IRH7450, IRH8450 Devices
12
www.irf.com
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
VDD = 25V, Starting TJ = 25°C,
Peak IL = 11A, L>7.4mH RG=25
ISD
≤
11A, di/dt
≤
120A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150°C
Suggested RG =2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Pre-Irradiation
See Figures 18 through 30 for pre-irradiation
curves
Case Outline and Dimensions — TO-204AE
Conforms to JEDEC Outline TO-204AE
Dimensions in Millimeters and ( Inches )
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
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IR GERMANY:
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IR ITALY:
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IR FAR EAST:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 10/98
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