- 您現(xiàn)在的位置：買(mǎi)賣IC網(wǎng) > PDF目錄360957 > IRH8450 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package PDF資料下載
參數(shù)資料
| 型號(hào)： | IRH8450 |
| 英文描述： | 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package |
| 中文描述： | 500V 1000kRad高可靠性單N溝道MOSFET的工貿(mào)硬化在TO - 204AA封裝 |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 350K |
| 代理商： | IRH8450 |
IRH7450, IRH8450 Devices
www.irf.com
3
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hard-
ness assurance program at International Rectifier
comprises three radiation environments.
Table 1. Low Dose Rate
Parameter
IRH7450
100K Rads (Si) 1000K Rads (Si)
Units
Min
Max
Min
500
—
500
2.0
4.0
1.25
—
100
—
—
-100
—
—
50
—
—
0.45
—
IRH8450
Test Conditions
Max
—
4.5
100
-100
100
0.6
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance One
Diode Forward Voltage
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=0.8 x Max Rating, V
GS
=0V
V
GS
= 12V, I
D
= 7.0A
nA
μA
V
SD
—
1.6
—
1.6
V
TC = 25°C, IS =11A,V
GS
= 0V
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 6 and a V
bias condition equal to 80% of the
device rated voltage per note 7. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 10
5
Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRH7450. Post-irradiation limits of the devices
irradiated to 1 x 10
6
Rads (Si) are presented in Table
1, column 2, IRH8450. The values in Table 1 will be
met for either of the two low dose rate test circuits that
are used. Both pre- and post-irradiation performance
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
parison.
High dose rate testing may be done on a special re-
quest basis using a dose rate up to 1 x 10
12
Rads (Si)/
Sec (See Table 2).
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Radiation Characteristics
Table 2. High Dose Rate
10
11
Rads (Si)/sec 10
12
Rads (Si)/sec
Min Typ Max
—
—
400
Parameter
Drain-to-Source Voltage
Min Typ Max
Units
—
—
400
Test Conditions
V
DSS
V
Applied drain-to-source voltage during
gamma-dot
Peak radiation induced photo-current
A/μsec Rate of rise of photo-current
— 133 — — μH
Circuit inductance required to limit di/dt
IPP
di/dt
L1
—
—
27
8
—
—
—
15
—
—
8
—
—
3
A
Table 3. Single Event Effects
LET (Si)
Fluence Range V
DS
Bias V
GS
Bias
Ion
(MeV/mg/cm
2
) (ions/cm
2
) (μm) (V) (V)
Cu 28
3x 10
5
~43 275
-5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRH93230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AA package |
| IRH93250 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-204AE package |
| IRHA7260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHA8260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHC7110 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRH9130 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH9130SCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRH9150 | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 22A 3PIN TO-204AE - Rail/Tube |
| IRH9230 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRH9250 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。