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參數資料
| 型號： | IRHA8260 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直|第43A條（丁）|貼片 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 344K |
| 代理商： | IRHA8260 |
IRHNA7260, IRHNA8260 Devices
Pre-Irradiation
8
www.irf.com
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-irradiation)
applied and VGS = 0 during irradiation per
MlL-STD -750, method 1019, condition A.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
All Pre-Irradiation and Post-Irradiation test
conditions are
identical
to facilitate direct
comparison for circuit applications.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25
°
C,
EAS = [0.5 * L * (IL
Peak IL = 43A, VGS = 12V, 25
≤
RG
≤
200
ISD
≤
43A, di/dt
≤
410A/
μ
s,
VDD
≤
BVDSS, TJ
≤
150
°
C
Suggested RG = 2.35
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
2
)]
Case Outline and Dimensions — SMD-2
SMD-2
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http://www.irf.com/ Data and specifications subject to change without notice.
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