欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRHE4230
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
中文描述: 抗輻射功率MOSFET表面貼裝(持有LCC - 18)
文件頁數: 1/12頁
文件大小: 269K
代理商: IRHE4230
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
5.5
3.5
22
25
0.2
±20
240
5.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( for 5s)
0.42 (Typical)
g
PD - 90713E
Pre-Irradiation
International Rectifier’s RADHard HEXFET
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
technol-
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-18)
02/01/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHE7230 100K Rads (Si)
IRHE3230 300K Rads (Si)
IRHE4230 600K Rads (Si)
IRHE8230 1000K Rads (Si)
I
D
QPL Part Number
JANSR2N7262U
JANSF2N7262U
JANSG2N7262U
JANSH2N7262U
0.35
0.35
0.35
0.35
5.5A
5.5A
5.5A
5.5A
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light Weight
For footnotes refer to the last page
IRHE7230
JANSR2N7262U
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RAD-Hard
HEXFET
MOSFET
TECHNOLOGY
LCC - 18
相關PDF資料
PDF描述
IRHF53034 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHF54034 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHF57034 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHF58034 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場效應管)
IRHF54230 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應管)
相關代理商/技術參數
參數描述
IRHE53034 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHE53130 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHE53133SE 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk
IRHE53230SE 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk
IRHE53234SE 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk
主站蜘蛛池模板: 铜梁县| 阿拉善左旗| 泾源县| 景泰县| 从江县| 长寿区| 祁东县| 大洼县| 府谷县| 克什克腾旗| 朝阳市| 苍溪县| 隆尧县| 左贡县| 亳州市| 湾仔区| 南阳市| 修文县| 泊头市| 抚松县| 松滋市| 潍坊市| 长葛市| 商城县| 蕉岭县| 老河口市| 阿坝县| 江门市| 罗山县| 平定县| 谢通门县| 忻城县| 安达市| 西吉县| 长岛县| 工布江达县| 乐业县| 博客| 监利县| 陇西县| 海安县|