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參數(shù)資料
| 型號(hào)： | IRHF57034 |
| 廠商： | International Rectifier |
| 英文描述： | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 60V的N通道通孔抗輻射功率MOSFET（60V的通孔安裝抗輻射功率?溝道馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 130K |
| 代理商： | IRHF57034 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
*
10
48
25
0.2
±20
270
12
2.5
9.6
-55 to 150
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57034
60V, N-CHANNEL
TECHNOLOGY
R
5
12/01/99
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57034
100K Rads (Si) 0.048
IRHF53034
300K Rads (Si) 0.048
IRHF54034
600K Rads (Si) 0.048
IRHF58034
1000K Rads (Si) 0.060
I
D
12*A
12*A
12*A
12*A
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Ratings
n
Dynamic dv/dt Ratings
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
For footnotes refer to the last page
TO-39
* Current is limited by internal wire diameter
PD
-
93791
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| IRHF58034 | 60V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(60V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHF54230 | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
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| IRHF58230 | 200V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
| IRHF54Z30 | 30V, N-CHANNEL Thru-hole Radiation Hardened Power MOSFET(30V,通孔安裝抗輻射功率N溝道MOS場(chǎng)效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
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| IRHF57133SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF57214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF57214SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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