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參數(shù)資料
| 型號(hào)： | IRHF57133SE |
| 英文描述： | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package |
| 中文描述： | 130V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 205AF包 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF57133SE |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
12
*
10
48
25
0.2
±20
520
12
2.5
3.0
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 ( 0.063 in./1.6mm from case for 10s)
0.98 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
IRHF57Z30
30V, N-CHANNEL
TECHNOLOGY
10/17/01
www.irf.com
1
Product Summary
Part Number Radiation Level R
DS(on)
IRHF57Z30
100K Rads (Si) 0.045
IRHF53Z30
300K Rads (Si) 0.045
IRHF54Z30
600K Rads (Si) 0.045
IRHF58Z30
1000K Rads (Si) 0.056
I
D
12A*
12A*
12A*
12A*
Features:
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Neutron Tolerant
Identical Pre and Post Electrical Test Conditions
Repetitive Avalanche Ratings
Dynamic dv/dt Ratings
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
For footnotes refer to the last page
TO-39
* Current is limited by internal wire diameter
PD - 93793A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRHF57Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF58034 | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
| IRHF58Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF593110 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF |
| IRHF593230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRHF57214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF57214SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF57230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) |
| IRHF57230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF57230SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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