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參數資料
| 型號： | IRHF57133SE |
| 英文描述： | 130V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package |
| 中文描述： | 130V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 205AF包 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF57133SE |
IRHF57Z30
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 20V, starting TJ = 25
°
C, L= 7.2 mH
Peak IL = 12A, VGS = 12V
ISD
≤
12A, di/dt
≤
135A/
μ
s,
VDD
≤
30V, TJ
≤
150
°
C
Case Outline and Dimensions
—
TO-205AF (Modified TO-39)
Footnotes:
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 10/01
相關PDF資料 |
PDF描述 |
|---|---|
| IRHF57Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF58034 | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
| IRHF58Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF593110 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF |
| IRHF593230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
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參數描述 |
|---|---|
| IRHF57214SE | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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| IRHF57230 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION GARDENED POWER MOSFET THRU-HOLE (TO-39) |
| IRHF57230SE | 制造商:International Rectifier 功能描述:MOSFET, HIREL, SEE HARD, R5 - Bulk |
| IRHF57230SESCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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