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參數資料
| 型號： | IRHF57Z30 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 12A條（丁）| TO - 39封裝 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF57Z30 |
www.irf.com
3
Radiation Characteristics
IRHF57Z30
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Up to 600K Rads(Si)
1
1000K Rads (Si)
2
Units
Test Conditions
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 30 — 30 — V V
GS
= 0V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.5 4.0
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 10 — 10 μA V
DS
= 24V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.024 — 0.03
V
GS
=12V, I
D
=10A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.045 — 0.056
V
GS
=12V, I
D
=10A
On-State Resistance (TO-39)
V
SD
Diode Forward Voltage
— 1.5 — 1.5 V
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part numbers IRHF57Z30, IRHF53Z30 and IRHF54Z30
2. Part number IRHF58Z30
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS =12A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
For footnotes refer to the last page
Ion
(MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V @V
=-20V
Br
37.9
255 33.4 30 30 30 25 20
I
59.4
290 28.8 25 25 20 15 10
Au
80.3
313 26.5 22.5 22.5 15
LET
Energy Range
V
DS
(V)
10
—
0
5
10
15
20
25
30
35
0
-5
-10
-15
-20
VGS
V
Br
I
AU
Au
相關PDF資料 |
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|---|---|
| IRHF58034 | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-205AF package |
| IRHF58Z30 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| IRHF593110 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 2.6A I(D) | TO-205AF |
| IRHF593230 | -200V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-205AF package |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHF58034 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58034CM | 制造商:IRF 制造商全稱:International Rectifier 功能描述:RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) |
| IRHF58130 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHF58230 | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHF58Z30 | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
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