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參數資料
| 型號： | IRHF57Z30 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 12A I(D) | TO-39 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 12A條（丁）| TO - 39封裝 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 129K |
| 代理商： | IRHF57Z30 |
IRHF57Z30
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
24 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 20V, starting TJ = 25
°
C, L= 7.2 mH
Peak IL = 12A, VGS = 12V
ISD
≤
12A, di/dt
≤
135A/
μ
s,
VDD
≤
30V, TJ
≤
150
°
C
Case Outline and Dimensions
—
TO-205AF (Modified TO-39)
Footnotes:
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 10/01
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