欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRHG58110
廠商: International Rectifier
英文描述: RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
中文描述: 抗輻射功率MOSFET的通孔(莫- 036)
文件頁數: 1/8頁
文件大小: 112K
代理商: IRHG58110
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036)
08/01/02
www.irf.com
1
MO-036AB
IRHG57110
100V, Quad N-CHANNEL
RAD-Hard
TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Product Summary
Part Number Radiation Level R
DS(on)
IRHG57110 100K Rads (Si) 0.29
IRHG53110 300K Rads (Si) 0.29
IRHG54110 600K Rads (Si) 0.29
IRHG58110 1000K Rads (Si) 0.31
I
D
1.6A
1.6A
1.6A
1.6A
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
130
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
1.6
1.0
6.4
1.4
0.011
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
1.6
0.14
6.5
-55 to 150
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
o
C
A
For footnotes refer to the last page
Pre-Irradiation
PD - 94432A
相關PDF資料
PDF描述
IRHG53110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG54110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG57110 RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036)
IRHG9110 Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET)
IRHG93110 Thru-Hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率MOSFET)
相關代理商/技術參數
參數描述
IRHG593110 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHG597110 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHG6110 制造商:International Rectifier 功能描述:TRANS MOSFET N/P-CH 100V 1A/0.75A 14PIN MO-036AB - Rail/Tube
IRHG6110SCV 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHG63110 制造商:IRF 制造商全稱:International Rectifier 功能描述:100V, Combination 2N-2P-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY
主站蜘蛛池模板: 东光县| 江山市| 开远市| 崇仁县| 闽清县| 舒兰市| 姜堰市| 贵德县| 万山特区| 盐亭县| 鸡东县| 禹城市| 桐乡市| 文登市| 镇康县| 阿合奇县| 林口县| 海林市| 昌邑市| 巢湖市| 会昌县| 霍林郭勒市| 黔东| 镇安县| 三河市| 牟定县| 贺州市| 绥宁县| 鄂托克旗| 吉木乃县| 黔江区| 友谊县| 西贡区| 江口县| 安庆市| 双江| 浦东新区| 金阳县| 武宣县| 扎赉特旗| 胶南市|