欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: IRHNA53Z60
廠商: International Rectifier
英文描述: 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET)
中文描述: 30V的N通道表面安裝抗輻射功率MOSFET(30V的,表貼型抗輻射功率?溝道MOSFET的)
文件頁數: 1/8頁
文件大小: 105K
代理商: IRHNA53Z60
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
75*
75*
300
300
2.4
±20
500
75
30
0.83
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (for 5s)
3.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low
RDS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
IRHNA57Z60
30V, N-CHANNEL
TECHNOLOGY
R
5
4/10/00
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
SMD-2
Product Summary
Part Number Radiation Level R
DS(on)
IRHNA57Z60 100K Rads (Si) 0.0035
75*A
IRHNA53Z60 300K Rads (Si) 0.0035
75*A
IRHNA54Z60 600K Rads (Si) 0.0035
75*A
IRHNA58Z60 1000K Rads (Si) 0.0040
75*A
I
D
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Ceramic Package
n
Light Weight
PD - 91787E
相關PDF資料
PDF描述
IRHNA57Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET)
IRHNA58Z60 30V, N-Channel Surface Mount Radiation Hardened Power MOSFET(30V,表貼型抗輻射功率N溝道MOSFET)
IRHNA57264SE Surface Mount (SMD-2) Radiation Hardened Power MOSFET(表貼型抗輻射功率MOSFET)
IRHNA593064 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
IRHNA597064 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
相關代理商/技術參數
參數描述
IRHNA54064 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHNA54160 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHNA54260 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk
IRHNA54Z60 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk
IRHNA57060 制造商:IRF 制造商全稱:International Rectifier 功能描述:200V, N-CHANNEL
主站蜘蛛池模板: 邹城市| 额尔古纳市| 佳木斯市| 汉源县| 湾仔区| 高平市| 广南县| 德昌县| 河源市| 明光市| 南宫市| 山阳县| 马尔康县| 甘南县| 容城县| 津市市| 盈江县| 宜阳县| 房产| 广丰县| 东城区| 长白| 东阳市| 宜黄县| 剑阁县| 白玉县| 乌鲁木齐县| 鱼台县| 奉新县| 开化县| 肥东县| 两当县| 保德县| 东海县| 邢台市| 宿迁市| 昌图县| 皮山县| 上栗县| 柞水县| 安溪县|