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參數資料
| 型號： | IRHNA7360SE |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A) |
| 中文描述： | 晶體管N溝道（BVdss \u003d為400V，的RDS（on）\u003d 0.20ohm，身份證\u003d 24.3A） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 137K |
| 代理商： | IRHNA7360SE |
Product Summary
Part Number
BV
DSS
R
DS(on)
I
D
IRHNA7360SE
400V
0.20
24.3A
Features:
n
Radiation Hardened up to 1 x 10
5
Rads (Si)
n
Single Event Burnout (SEB) Hardened
n
Single Event Gate Rupture (SEGR) Hardened
n
Gamma Dot (Flash X-Ray) Hardened
n
Neutron Tolerant
n
Identical Pre- and Post-Electrical Test Conditions
n
Repetitive Avalanche Rating
n
Dynamic dv/dt Rating
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Surface Mount
n
Lightweight
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Package Mounting Surface Temperature
Weight
IRHNA7360SE
24.3
15.3
97.2
300
2.4
±20
500
24.3
30
4.0
-55 to 150
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
W
W/K
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
300 (for 5 sec.)
3.3 (typical)
g
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Provisional Data Sheet No. PD-9.1398A
Pre-Radiation
400 Volt, 0.20
, (SEE) RAD HARD HEXFET
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE fail-
ure. Additionally, under
identical
pre- and post-radia-
tion test conditions, International Rectifier’s RAD HARD
HEXFETs retain
identical
electrical specifications up
to 1 x 10
5
Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 10
12
Rads (Si)/Sec, and return to normal opera-
tion within a few microseconds. Since the SEE pro-
cess utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality and
reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as
voltage control, very fast switching, ease of parallel-
ing and temperature stability of the electrical param-
eters.
They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
o
C
A
IRHNA7360SE
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET
TRANSISTOR
Next Data Sheet
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