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參數資料
| 型號： | IRHNA93064 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 48A I(D) | SMT |
| 中文描述： | 晶體管| MOSFET的| P通道| 60V的五（巴西）直| 48A條（丁）|貼片 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 119K |
| 代理商： | IRHNA93064 |
www.irf.com
3
Pre-Irradiation
IRHNB7064
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
Min Max Min Max
BV
DSS
Drain-to-Source Breakdown Voltage 60 — 60 — V V
GS
= 12V, I
D
= 1.0mA
V
GS(th)
Gate Threshold Voltage
2.0 4.0 1.25 4.5
I
GSS
Gate-to-Source Leakage Forward
— 100 — 100 nA
I
GSS
Gate-to-Source Leakage Reverse
— -100 — -100
I
DSS
Zero Gate Voltage Drain Current
— 25 — 50 μA V
DS
=48V, V
GS
=0V
R
DS(on)
Static Drain-to-Source
— 0.015 — 0.025
V
GS
= 12V, I
D
=56A
On-State Resistance (TO-3)
R
DS(on)
Static Drain-to-Source
— 0.015 — 0.025
V
GS
= 12V, I
D
=56A
On-State Resistance (SMD-3)
V
SD
Diode Forward Voltage
— 3.0 — 3.0 V
100 K Rads (Si)
1
300-1000K Rads (Si)
2
Units
Test Conditions
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
1. Part number IRHNB7064
2. Part numbers IRHNB8064, RHNB3064, and IRHNB4064
Fig a.
Single Event Effect, Safe Operating Area
V
GS
= 0V, IS = 75A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Table 2. Single Event Effect Safe Operating Area
0
10
20
30
40
50
60
70
0
-5
-10
-15
-20
VGS
V
BR
I
n
o
T
E
m
L
)
2
m
c
(
V
e
M
y
)
g
V
r
e
e
n
M
(
E
e
)
g
n
m
a
μ
(
R
)
V
(
S
D
V
V
0
=
S
G
V
@
V
5
-
=
S
G
V
@
V
0
1
-
=
S
G
V
@
V
5
1
-
=
S
G
V
@
V
0
2
-
=
S
G
V
@
I
9
5
5
4
3
8
3
0
6
0
6
5
4
0
4
0
3
r
B
8
3
5
0
3
9
3
0
4
5
3
0
3
5
2
0
2
相關PDF資料 |
PDF描述 |
|---|---|
| IRHNA3064 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | SMT |
| IRHNA3160 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 51A I(D) | SMT |
| IRHNA3260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
| IRHNB3260 | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRHNA93160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNA93260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB3064 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB3160 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
| IRHNB3260 | 制造商:International Rectifier 功能描述:HEXFET, HIREL, RAD HARD,G4 - Bulk |
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