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參數資料
| 型號： | IRHNJ63130 |
| 廠商： | International Rectifier |
| 英文描述： | 100V, N-CHANNEL |
| 中文描述： | 100V的，N溝道 |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 179K |
| 代理商： | IRHNJ63130 |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 19
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
Operating Junction
TSTG
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
22*
88
75
0.6
±20
73
22
7.5
3.8
W
W/°C
V
mJ
A
mJ
V/ns
-55 to 150
300 (for 5s)
1.0 (Typical)
g
o
C
A
www.irf.com
1
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level R
DS(on)
IRHNJ67130 100K Rads (Si) 0.042
IRHNJ63130 300K Rads (Si) 0.042
I
D
22A*
22A*
For footnotes refer to the last page
Pre-Irradiation
RADIATION HARDENED
IRHNJ67130
POWER MOSFET
SURFACE-MOUNT (SMD-0.5)
Features:
Low R
DS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
SMD-0.5
International Rectifier’s R6
TM
technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer (LET)
up to 90MeV/(mg/cm
2
).
Their combination of very low
RDS(on)
and faster
switching times reduces power loss and increases
power density in today’s high speed switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability
of electrical parameters.
PD-95816A
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相關代理商/技術參數 |
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