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參數(shù)資料
| 型號(hào)： | IRHQ58110 |
| 廠(chǎng)商： | International Rectifier |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 122K |
| 代理商： | IRHQ58110 |
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
08/01/01
www.irf.com
1
LCC-28
IRHQ57110
100V, Quad N-CHANNEL
RAD-Hard
TECHNOLOGY
HEXFET
International Rectifier’s RAD-Hard
TM
HEXFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
MOSFET
Features:
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Product Summary
Part Number Radiation Level R
DS(on)
IRHQ57110 100K Rads (Si) 0.27
IRHQ53110 300K Rads (Si) 0.27
IRHQ54110 600K Rads (Si) 0.27
IRHQ58110 1000K Rads (Si) 0.29
I
D
4.6A
4.6A
4.6A
4.6A
Absolute Maximum Ratings (Per Die)
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
47
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
4.6
2.9
18.4
12
0.1
±20
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
4.6
1.2
6.1
-55 to 150
300 (for 5s)
0.89 (Typical)
g
o
C
A
For footnotes refer to the last page
Pre-Irradiation
PD - 94211A
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