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參數(shù)資料
| 型號： | IRHY58130CM |
| 廠商： | International Rectifier |
| 英文描述： | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| 中文描述： | 100V的N通道通孔抗輻射功率MOSFET（100V的，通孔安裝抗輻射功率?溝道馬鞍山場效應(yīng)管） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 118K |
| 代理商： | IRHY58130CM |
Absolute Maximum Ratings
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
16*
15
64
75
0.6
±20
87
16
7.5
1.4
W
W/°C
V
mJ
A
mJ
V/ns
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
-55 to 150
300 (0.063in./1.6mm from case for 10sec)
4.3 (Typical)
g
Pre-Irradiation
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space appli-
cations. These devices have been characterized for
Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of paral-
leling and temperature stability of electrical param-
eters.
o
C
A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
IRHY57130CM
100V, N-CHANNEL
TECHNOLOGY
R
5
1/26/2000
www.irf.com
1
* Current is limited by internal wire diameter
For footnotes refer to the last page
Product Summary
Part Number Radiation Level R
DS(on)
IRHY57130CM 100K Rads (Si) 0.060
IRHY53130CM 300K Rads (Si) 0.060
IRHY54130CM 600K Rads (Si) 0.060
IRHY58130CM 1000K Rads (Si) 0.075
I
D
16A*
16A*
16A*
16A*
Features:
n
Single Event Effect (SEE) Hardened
n
Ultra Low R
DS(on)
n
Low Total Gate Charge
n
Proton Tolerant
n
Simple Drive Requirements
n
Ease of Paralleling
n
Hermetically Sealed
n
Ceramic Package
n
Light Weight
TO-257AA
PD - 93826
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| IRHY54130CM | 100V, N-Channel Thru-hole Radiation Hardened Power MOSFET(100V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHY53230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHY57230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHY58230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
| IRHY54230CM | 200V, N-Channel Thru-hole Radiation Hardened Power MOSFET(200V,通孔安裝抗輻射功率N溝道MOS場效應(yīng)管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| IRHY58230CM | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY58Z30CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CM | 制造商:International Rectifier 功能描述:MOSFET, HIREL, RAD HARD, R5 - Bulk |
| IRHY593034CMSCS | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
| IRHY593034CMSCV | 制造商:International Rectifier 功能描述:HIREL, HEXFET RHD - Bulk |
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