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參數資料
| 型號： | IRHY7G30CMSE |
| 英文描述： | 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
| 中文描述： | 1000V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 257AA封裝 |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 110K |
| 代理商： | IRHY7G30CMSE |
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
Fig a.
Single Event Effect, Safe Operating Area
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
www.irf.com
3
IRHY7G30CMSE
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Parameter
100K Rads (Si)
Min
1000
1.4
—
—
—
Units
Test Conditions
Max
—
4.5
100
-100
50
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-257)
V
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20V
V
DS
=800V, V
GS
=0V
nA
μA
—
15
V
GS
= 12V, I
D
= 0.76A
R
DS(on)
V
SD
Diode Forward Voltage
—
1.2
V
V
GS
= 0V, I
D
= 1.2A
— 15
V
GS
= 12V, I
D
= 0.76A
0
100
200
300
400
500
600
700
800
900
0
-5
-10
-15
-20
VGS
V
Br
I
Table 2. Single Event Effect Safe Operating Area
Ion
MeV/(mg/cm
2
)) (MeV) (μm)
@V
=0V @V
=-5V @V
=-10V @V
=-15V
I
59.8
343 32.6 400 400 350 250
Br
36.8
305 39 775 775 775 775
LET
Energy Range
V
DS
(V)
@V
=-20V
200
775
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