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參數資料
| 型號： | IRHY7G30CMSE |
| 英文描述： | 1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package |
| 中文描述： | 1000V 100kRad高可靠性單N溝道MOSFET的看硬化在TO - 257AA封裝 |
| 文件頁數： | 8/8頁 |
| 文件大小： | 110K |
| 代理商： | IRHY7G30CMSE |
IRHY7G30CMSE
Pre-Irradiation
8
www.irf.com
Pulse width
≤
300
μ
s; Duty Cycle
≤
2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Total Dose Irradiation with VDS Bias.
800 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Repetitive Rating; Pulse width limited by
maximum junction temperature.
VDD = 50V, starting TJ = 25
°
C, L= 130 mH
Peak IL = 1.2A, VGS = 12V
ISD
≤
1.2A, di/dt
≤
165A/
μ
s,
VDD
≤
600V, TJ
≤
150
°
C
Footnotes:
Case Outline and Dimensions
—
TO-257AA
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
Data and specifications subject to change without notice. 07/01
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