- 您現在的位置：買賣IC網 > PDF目錄384506 > IRL3103L (International Rectifier) Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) PDF資料下載
參數資料
| 型號： | IRL3103L |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 30V的，的Rds（on）\u003d 12mohm，身份證\u003d 64A條） |
| 文件頁數： | 1/10頁 |
| 文件大小： | 125K |
| 代理商： | IRL3103L |
IRL3103S
IRL3103L
HEXFET
Power MOSFET
02/14/02
Parameter
Typ.
–––
–––
Max.
1.6
40
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Thermal Resistance
www.irf.com
1
V
DSS
= 30V
R
DS(on)
= 12m
I
D
= 64A
S
D
G
Absolute Maximum Ratings
Parameter
Max.
64
45
220
94
0.63
± 16
34
22
5.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/
°
C
V
A
mJ
V/ns
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbf
in (1.1N
m)
°
C
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
The through-hole version (IRL3103L) is available for low-
profile applications.
Advanced Process Technology
Surface Mount (IRL3103S)
Low-profile through-hole (IRL3103L)
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
D
2
Pak
IRL3103S
TO-262
IRL3103L
°
C/W
PD - 94162
相關PDF資料 |
PDF描述 |
|---|---|
| IRL3103S | Power MOSFET(Vdss=30V, Rds(on)=12mohm, Id=64A) |
| IRL3202 | HEXFET Power MOSFET |
| IRL3215 | HEXFET Power MOSFET |
| IRL3302 | HEXFET Power MOSFET |
| IRL3502 | HEXFET Power MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRL3103LHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 64A 3-Pin(3+Tab) TO-262 |
| IRL3103LPBF | 功能描述:MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL3103PBF | 功能描述:MOSFET MOSFT 30V 56A 12mOhm 22nC LogLvlAB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL3103S | 功能描述:MOSFET N-CH 30V 64A D2PAK RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRL3103SHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 30V 64A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 30V 64A 3PIN D2PAK - Bulk |
發布緊急采購，3分鐘左右您將得到回復。