- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385447 > IRL5602S (International Rectifier) HEXFET Power MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRL5602S |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 171K |
| 代理商： | IRL5602S |
Parameter
Typ.
–––
–––
Max.
2.0
40
Units
R
q
JC
R
q
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
IRL5602S
HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
Parameter
Max.
-24
-17
-96
75
0.5
± 8.0
290
-12
7.5
-0.81
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Thermal Resistance
V
DSS
= -20V
R
DS(on)
= 0.042
W
I
D
= -24A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
P-Channel
l
Fast Switching
l
Fully Avalanche Rated
Description
5/11/99
1
S
D
G
D Pak
°C/W
PD- 91888
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRL7NJ3802 | HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) |
| IRLD024 | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) |
| IRLI3215PBF | 68/MDR/RECP/VERT PRS FIT/M2.6/SCW/30 MIN |
| IRLI520G | HEXFET Power MOSFET(HEXFET 功率MOS場效應(yīng)管) |
| IRLI540NPBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRL5602SHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 24A 3-Pin(2+Tab) D2PAK |
| IRL5602SPBF | 功能描述:MOSFET 20V 1 N-CH HEXFET 42mOhms 29.3nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRL5602SPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRL5602STRL | 功能描述:MOSFET P-CH 20V 24A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRL5602STRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 20V 24A 3-Pin(2+Tab) D2PAK T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。