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參數資料
| 型號： | IRLI620G |
| 廠商： | International Rectifier |
| 英文描述： | Silicon Switching Diode, 200V 250MW SOT-23 |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）\u003d 0.80ohm，身份證\u003d 4.0a上） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 339K |
| 代理商： | IRLI620G |
Parameter
Min.
––––
––––
Typ.
––––
––––
Max.
4.1
65
Units
R
θ
JC
R
θ
JA
Junction-to-Case
Junction-to-Ambient
IRLI620G
HEXFET
Power MOSFET
PD - 9.1235
Revision 0
V
DSS
= 200V
R
DS(on)
= 0.80
I
D
= 4.0A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Max.
4.0
2.6
16
30
0.24
±10
62
4.0
3.0
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 5.0V
Continuous Drain Current, V
GS
@ 5.0V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°C
300 (1.6mm from case)
10 lbfin (1.1Nm)
Isolated Package
High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. 4.8mm
Logic-Level Gate Drive
R
DS(ON)
Specified at V
GS
= 4V & 5V
Fast Switching
Ease of paralleling
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-220 Fullpak eliminates the need for additional insulating hardware in
commercial-industrial applications. The moulding compound used provides a
high isolation capability and a low thermal resistance between the tab and external
heatsink. This isolation is equivalent to using a 100 micron mica barrier with
standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip
or by a single screw fixing.
Description
°C/W
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| IRLI620GPBF | 功能描述:MOSFET N-Chan 200V 4.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI630 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLI630A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:ADVANCED POWER MOSFET |
| IRLI630ATU | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLI630G | 功能描述:MOSFET N-Chan 200V 6.2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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