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參數資料
| 型號： | IRLML5103 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(HEXFET 功率MOS場效應管) |
| 中文描述： | HEXFET功率MOSFET（馬鞍山的HEXFET功率場效應管） |
| 文件頁數： | 1/8頁 |
| 文件大小： | 107K |
| 代理商： | IRLML5103 |
PD - 9.1260D
HEXFET
Power MOSFET
V
DSS
= -30V
R
DS(on)
= 0.60
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
A customized leadframe has been incorporated into the
standard SOT-23 package to produce a HEXFET Power
MOSFET with the industry's smallest footprint. This
package, dubbed the Micro3, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards.
IRLML5103
8/25/97
Description
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel MOSFET
l
SOT-23 Footprint
l
Low Profile (<1.1mm)
l
Available in Tape and Reel
l
Fast Switching
S
D
G
Micro3
Parameter
Max.
-0.76
-0.61
-4.8
540
4.3
± 20
-5.0
-55 to + 150
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
mW
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
Absolute Maximum Ratings
Parameter
Typ.
–––
Max.
230
Units
°C/W
R
θ
JA
Maximum Junction-to-Ambient
Thermal Resistance
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRLML5103GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET POWER MOSFET |
| IRLML5103GTRPBF | 功能描述:MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLML5103PBF | 制造商:International Rectifier 功能描述:MOSFET P -30V -0.61A MICRO 3 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -0.61A, MICRO 3 制造商:International Rectifier 功能描述:P CH MOSFET, -30V, 610mA, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-610mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V ;RoHS Compliant: Yes |
| IRLML5103PBF_11 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Lead-Free, Fast Switching, Available in Tape and Reel |
| IRLML5103TR | 功能描述:MOSFET P-CH 30V 760MA SOT-23 RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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