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參數(shù)資料
| 型號(hào)： | IRLMS5703 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 276K |
| 代理商： | IRLMS5703 |
IRLMS5703
HEXFET
Power MOSFET
V
DSS
= -30V
R
DS(on)
= 0.20
PD - 91413
E
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The Micro6 package with its customized leadframe
produces a HEXFET power MOSFET with Rds(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R
reduction enables a current-handling increase of nearly
300% compared to the SOT-23.
Description
4/7/04
M icro6
l
Generation V Technology
l
Micro6 Package Style
l
Ultra Low Rds(on)
l
P-Channel MOSFET
Top View
1
2
D
G
A
D
D
D
S
3
4
5
6
Absolute Maximum Ratings
Parameter
Max.
-2.3
-1.9
-13
1.7
13
± 20
5.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@- 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
A
W
mW/°C
V
V/ns
°C
V
GS
dv/dt
T
J,
T
STG
-55 to + 150
Parameter Min. Typ. Max Units
R
θ
JA
Maximum Junction-to-Ambient
––– ––– 75 °C/W
Thermal Resistance Ratings
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRLMS6802 | HEXFET Power MOSFET |
| IRLR024N | HEXFET Power MOSFET |
| IRLU024N | HEXFET Power MOSFET |
| IRLR024PBF | HEXFET POWER MOSFET |
| IRLR024Z | AUTOMOTIVE MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRLMS5703TR | 功能描述:MOSFET P-CH 30V 2.3A 6-TSOP RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRLMS5703TRPBF | 功能描述:MOSFET MOSFT P-Ch -2.3A 200mOhm 7.2nC LogLvl RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRLMS5703TRPBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRLMS5703TRPBF-CUT TAPE | 制造商:IR 功能描述:Single P-Channel 30 V 1.7 W 7.2 nC Hexfet Power Mosfet Surface Mount - MICRO-6 |
| IRLMS6702 | 制造商:International Rectifier 功能描述:MOSFET P LOGIC MICRO-6 |
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